List of all Graphical and Text Symbols Corresponding to Electronic Elements and their Parameters
1. General Symbols
•
V
CC
-
power supply voltage
2. Capacitors
el
2
2
-8
-6
C1 (Capacitor)
el
12
2
-8
-6
C2 (Variable Capacitor)
el
22
2
-8
-6
C3 (Polar Capacitor)
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Capacitors Graphical Symbols
•
I
L-C1
-
leackage current
capacitor C1
3. Diodes
el
2
2
-8
-6
D1 (Diode)
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Diode Graphical Symbol
•
I
R-D1
-
reverse (leackage) current
of diode D1
•
I
F-D1
-
maximum continuous (working) forward current
of diode D1
•
I
F(AV)-D1
-
average rectified forward current
of diode D1
•
I
FSM-D1
-
maximum non-repetitive (surge) forward current
of diode D1
•
I
FRM-D1
-
maximum repetitive forward current
of diode D1
•
V
R-D1
-
minimum breakdown voltage
of diode D1
•
V
RRM-D1
-
maximum repetitive reverse voltage
of diode D1
•
V
RWM-D1
-
maximum continuous (working) reverse voltage
of diode D1
•
V
F-D1
-
forward voltage
of diode D1
•
C
O-D1
-
capacitance
of diode D1
•
P
D-D1
-
total device dissipation
of diode D1
•
R
θJA-D1
-
thermal resistence, junction to ambient
of diode D1
•
T
stg-D1
-
storage temperature range
of diode D1
•
T
J-D1
-
operating junction temperature
of diode D1
4. Bipolar Transistors
wh
1
3
1
wv
3
1
1
wv
3
4
1
el
2
2
20
10
T1 (NPN Bipolar Transistor)
wh
16
3
1
wv
18
1
1
wv
18
4
1
el
17
2
20
10
T2 (PNP Bipolar Transistor)
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Bipolar Transistor Graphical Symbol
•
I
CEO-T1
-
collector-emitter cutoff (leackage) current
of bipolar transistor T1
•
I
CBO-T1
-
collector-base cutoff (leackage) current
of bipolar transistor T1
•
I
EBO-T1
-
emitter-base cutoff (leackage) current
of bipolar transistor T1
•
I
C-T1
-
maximum continuous (working) collector current
of bipolar transistor T1
•
I
CSM-T1
-
maximum non-repetitive (surge) collector current
of bipolar transistor T1
•
I
CRM-T1
-
maximum repetitive collector current
of bipolar transistor T1
•
I
B-T1
-
maximum continuous (working) base current
of bipolar transistor T1
•
V
CEO-T1
-
collector-emitter maximum voltage
of bipolar transistor T1
•
V
CBO-T1
-
collector-base maximum voltage
of bipolar transistor T1
•
V
EBO-T1
-
emitter-base maximum voltage
of bipolar transistor T1
•
V
CE(sat)-T1
-
collector-emitter saturation voltage
of bipolar transistor T1
•
V
BE(on)-T1
-
base-emitter on voltage
of bipolar transistor T1
•
h
21e-T1
-
dynamic forward current transfer ratio in common emitter circuit
of bipolar transistor T1
•
C
CE-T1
-
output capacitance
of bipolar transistor T1
•
P
D-T1
-
total device dissipation
of bipolar transistor T1
•
R
θJC-T1
-
thermal resistence, junction to case
of bipolar transistor T1
•
R
θJA-T1
-
thermal resistence, junction to ambient
of bipolar transistor T1
•
T
stg-T1
-
storage temperature range
of bipolar transistor T1
•
T
J-T1
-
operating junction temperature
of bipolar transistor T1